Electronic Raman scattering as a function of doping in high-T-c superconductors

被引：2
|
作者：
Kendziora, C [1 ]
Kelley, RJ [1 ]
Onellion, M [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
SPECTROSCOPIC STUDIES OF SUPERCONDUCTORS, PTS A AND B: PT A - INFRARED AND RAMAN SPECTRA; PT B - TUNNELING, PHOTOELECTRON, AND OTHER SPECTRA | 1996年 / 2696卷
关键词：
high-T-c superconductor; electronic Raman scattering; gap anisotropy;
D O I：
10.1117/12.241776
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：223 / 229
页数：7
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