Electronic Raman scattering as a function of doping in high-T-c superconductors

被引：2

作者：

Kendziora, C ^{[1
]}

Kelley, RJ ^{[1
]}

Onellion, M ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

SPECTROSCOPIC STUDIES OF SUPERCONDUCTORS, PTS A AND B: PT A - INFRARED AND RAMAN SPECTRA; PT B - TUNNELING, PHOTOELECTRON, AND OTHER SPECTRA | 1996年 / 2696卷

关键词：

high-T-c superconductor; electronic Raman scattering; gap anisotropy;

D O I：

10.1117/12.241776

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：223 / 229

页数：7

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