Enhancing the Performance of Organic Thin-Film Transistor using a Buffer Layer

被引:0
|
作者
Wu, Chung-Ming [1 ]
Su, Shui-Hsiang [1 ]
Kung, Shu-Yi [1 ]
Yokoyama, Meiso [1 ]
Huang, Tsung-Syun [2 ]
Su, Yan-Kuin [2 ]
机构
[1] I Shou Univ, Dept Elect Engn, Kaohsiung 840, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan
关键词
buffer layer; OTFTs; on/off ratio;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Vanadium oxide (V2O5) and 4,4',4 ''-tris(N-3-methylphenyl-N-phenyl-amino)-triphen ylamine (m-MTDATA) doped V2O5 film, respectively, is used as a buffer layer between source/drain electrodes and organic active layer in organic thin film transistors (OTFTs) to improve the electrical characteristics. Results show that the saturation current, mobility, threshold voltage, and on/off ratio are improved of the proposed OTFT with a buffer layer, especially on/off ratio is about five times than that of the device without a buffer layer.
引用
收藏
页码:1241 / +
页数:2
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