共 50 条
- [43] Electrical and optical properties of convex-type metamorphic In0.75Ga0.25As/In0.7Al0.3As quantum well structures grown by MBE on GaAs MATERIALS RESEARCH EXPRESS, 2017, 4 (10):
- [44] Electron-phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 215 - 220
- [45] Larger critical thickness determined by photoluminescence measurements in pseudomorphic In0.25Ga0.75As/Al0.32Ga0.68As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1167 - 1170
- [49] SUMMARY ABSTRACT - A COMPARATIVE-STUDY OF PHOTOVOLTAIC AND PHOTOLUMINESCENCE SPECTRA OF UNDOPED GAAS-AL0.25GA0.75AS MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 554 - 555