Electron-phonon coupling in the two-phonon mode ternary alloy Al0.25In0.75As/Ga0.25In0.75As quantum well

被引：7
|
作者：
Faugeras, C
Martinez, G
Capotondi, F
Biasiol, G
Sorba, L
机构：
[1] Max Planck Inst Festkorperforsch, Grenoble High Magnet Field Lab, F-38042 Grenoble 9, France
[2] CNRS, F-38042 Grenoble 9, France
[3] INFM, NEST, I-34012 Trieste, Italy
[4] INFM, TASC, I-34012 Trieste, Italy
[5] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy
来源：
EUROPHYSICS LETTERS | 2004年 / 67卷 / 06期
关键词：
D O I：
10.1209/epl/i2004-10153-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the infrared transmission of a two-dimensional electron gas (2DEG) confined in a Al0.25In0.75As/Ga0.25In0.75As single quantum well in order to study the electron optical phonon interaction in a two-phonon mode system. Infrared transmission experiments have been performed in both the perpendicular Faraday (PF) and tilted Faraday (TF) configurations for which the growth axis of the sample is tilted with respect to the incident light propagation direction and to the magnetic-field direction. The experimental results lead to question the validity of the concept of polaron mass in a real material.
引用
收藏
页码：1031 / 1037
页数：7
相关论文
共 50 条
  • [21] MAGNETOOPTICAL ABSORPTION-SPECTRUM OF D- ION IN GAAS-GA0.75AL0.25AS QUANTUM-WELL
    NATORI, A
    FUJITO, M
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 16 (02) : 137 - 142
  • [22] PHOTOVOLTAIC SPECTRA OF UNDOPED GAAS-AL0.25GA0.75AS MULTIPLE QUANTUM-WELL STRUCTURES - CORRELATION WITH PHOTOLUMINESCENCE
    YU, PW
    REYNOLDS, DC
    BAJAJ, KK
    LITTON, CW
    SINGH, J
    PENG, CK
    HENDERSON, T
    MORKOC, H
    SOLID STATE COMMUNICATIONS, 1986, 58 (01) : 37 - 40
  • [23] PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION STUDIES ON GAAS/AL0.25GA0.75AS ASYMMETRIC COUPLED DOUBLE-QUANTUM-WELL
    LEE, DH
    KIM, DW
    LEEM, YA
    OH, JC
    PARK, GH
    WOO, JC
    YOO, KH
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) : 3475 - 3478
  • [24] INFLUENCE OF QUANTUM-WELL WIDTH ON DEVICE PERFORMANCE OF AL0.30GA0.70AS IN0.25GA0.75AS (ON GAAS) MODFETS
    NGUYEN, LD
    RADULESCU, DC
    FOISY, MC
    TASKER, PJ
    EASTMAN, LF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (05) : 833 - 838
  • [25] In0.75Ga0.25As/InP Multiple Quantum-Well Discrete-Mode Laser Diode Emitting at 2 μm
    Phelan, Richard
    O'Carroll, John
    Byrne, Diarmuid
    Herbert, Chris
    Somers, Jim
    Kelly, Brian
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (08) : 652 - 654
  • [26] Magnetic-field-induced localization of carriers in Al0.25Ga0.75As/AlAs multiple-quantum-well structures
    Haetty, J
    Salib, M
    Petrou, A
    Schmiedel, T
    Dutta, M
    Pamulapati, J
    Newman, PG
    Bajaj, KK
    PHYSICAL REVIEW B, 1997, 56 (19): : 12364 - 12368
  • [27] INFLUENCE OF QUANTUM WELL WIDTH ON DC AND RF DEVICE PERFORMANCE IN PSEUDOMORPHIC AL0.30GA0.70AS/IN0.25GA0.75AS MODFETS
    NGUYEN, LD
    RADULESCU, DC
    TASKER, PJ
    FOISY, MC
    EASTMAN, LF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2451 - 2452
  • [28] CURRENT CHARACTERISTICS OF THE DOUBLE-BARRIER AL0.25GA0.75AS/AL0.45GA0.55AS/GAAS SINGLE-QUANTUM-WELL STRUCTURES
    OSOTCHAN, T
    CHIN, VWL
    TANSLEY, TL
    PHYSICAL REVIEW B, 1995, 52 (07): : 5202 - 5209
  • [29] EFFECT OF ELECTRIC-FIELD ON THE SHARP PHOTOLUMINESCENCE SPECTRA OF UNDOPED GAAS-AL0.25GA0.75AS MULTIPLE QUANTUM WELL STRUCTURES
    YU, PW
    REYNOLDS, DC
    BAJAJ, KK
    LITTON, CW
    MASSELINK, WT
    FISCHER, R
    MORKOC, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 624 - 626
  • [30] Effects of confinement on electron-phonon coupling for the two-dimensional electron gas in a GaAs/AlGaAs quantum well
    Dep of EME, RSPSE, ANU
    Phys B Condens Matter, 1-4 (62-64):
12345