High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds

被引：35

作者：

Tsukada, Yusuke ^{[1
]}

Enatsu, Yuuki ^{[1
]}

Kubo, Shuichi ^{[1
]}

Ikeda, Hirotaka ^{[1
]}

Kurihara, Kaori ^{[1
]}

Matsumoto, Hajime ^{[2
]}

Nagao, Satoru ^{[2
]}

Mikawa, Yutaka ^{[1
]}

Fujito, Kenji ^{[1
]}

机构：

[1] Mitsubishi Chem Corp, LED Mat Dept, Tsukuba Plant, R&TD Ctr, Ushiku, Ibaraki 3001295, Japan

[2] MCHC R&D Synergy Ctr Inc, Yokohama, Kanagawa 2278502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期

关键词：

LATERAL OVERGROWTH; GALLIUM NITRIDE; NONPOLAR; HVPE; DISLOCATIONS; REDUCTION; AREA;

D O I：

10.7567/JJAP.55.05FC01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we discusse the origin of basal-plane stacking faults (BSFs) generated in the homoepitaxial hydride vapor phase epitaxy (HVPE) growth of m-plane gallium nitride (GaN). We investigated the effects of seed quality, especially dislocation density, on BSF generation during homoepitaxy. The results clearly identify basal-plane dislocation in the seed as a cause of BSF generation. We realized high-quality m-plane GaN substrates with a 2-in. diameter using HVPE on low-dislocation-density m-plane seeds. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

共 50 条

[41] Investigation of surface acoustic waves anisotropy on high-quality AlN/Sapphire grown by hydride vapor phase epitaxy
Dong, Wenxiu
Ji, Xue
Wang, Weifan
Li, Tengkun
Huang, Jun
Zhou, Taofei
Fan, Yingmin
Xu, Ke
MATERIALS RESEARCH EXPRESS, 2019, 6 (09)
[42] Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density freestanding GaN substrates
Chichibu, S. F.
Yamaguchi, H.
Zhao, L.
Kubota, M.
Okamoto, K.
Ohta, H.
APPLIED PHYSICS LETTERS, 2008, 92 (09)
[43] High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy
Sawicka, Marta
Feduniewicz-Zmuda, Anna
Turski, Henryk
Siekacz, Marcin
Grzanka, Szymon
Krysko, Marcin
Dziecielewski, Igor
Grzegory, Izabella
Skierbiszewski, Czeslaw
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (03):
[44] High-quality 1.3 μm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates
Fekete, D.
Carron, R.
Gallo, P.
Dwir, B.
Rudra, A.
Kapon, E.
APPLIED PHYSICS LETTERS, 2011, 99 (07)
[45] Growth of High-Quality GaN Template From Nanometer-Size Lattice Channels By Hydride Vapor Phase Epitaxy
Usui, A.
Goto, H.
Nakagawa, T.
Sunakawa, H.
Matsueda, T.
Okada, A.
Mizuno, J.
Yamaguchi, A. A.
Shinohara, H.
Goto, H.
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3, 2013, 58 (04): : 25 - 31
[46] Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth
Shibata, T
Sone, H
Yahashi, K
Yamaguchi, M
Hiramatsu, K
Sawaki, N
Itoh, N
JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 67 - 71
[47] Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth
Shibata, Takumi
Sone, Hiroki
Yahashi, Katsunori
Yamaguchi, Masahito
Hiramatsu, Kazumasa
Sawaki, Nobuhiko
Itoh, Nobuo
Journal of Crystal Growth, 189-190 : 67 - 71
[48] Study of high-quality thick GaN films grown on RF-ZnO buffer by hydride vapoar phase epitaxy
Wang, Ru
Yang, Rui-Xia
Xu, Yong-Kuan
Mu, Cun
Wei, Wei
Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2009, 20 (12): : 1602 - 1605
[49] Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy
Yukawa, Y
Nakamura, T
Kosaki, M
Watanabe, Y
Nitta, S
Kamiyama, S
Amano, H
Akasaki, I
Otani, S
Kinoshita, H
COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 713 - 718
[50] Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy
Woo, Seohwi
Lee, Sangil
Choi, Uiho
Lee, Hyunjae
Kim, Minho
Han, Jaiyong
Nam, Okhyun
CRYSTENGCOMM, 2016, 18 (40) : 7690 - 7695

← 1 2 3 4 5 →