High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds

被引：35

作者：

Tsukada, Yusuke ^{[1
]}

Enatsu, Yuuki ^{[1
]}

Kubo, Shuichi ^{[1
]}

Ikeda, Hirotaka ^{[1
]}

Kurihara, Kaori ^{[1
]}

Matsumoto, Hajime ^{[2
]}

Nagao, Satoru ^{[2
]}

Mikawa, Yutaka ^{[1
]}

Fujito, Kenji ^{[1
]}

机构：

[1] Mitsubishi Chem Corp, LED Mat Dept, Tsukuba Plant, R&TD Ctr, Ushiku, Ibaraki 3001295, Japan

[2] MCHC R&D Synergy Ctr Inc, Yokohama, Kanagawa 2278502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期

关键词：

LATERAL OVERGROWTH; GALLIUM NITRIDE; NONPOLAR; HVPE; DISLOCATIONS; REDUCTION; AREA;

D O I：

10.7567/JJAP.55.05FC01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we discusse the origin of basal-plane stacking faults (BSFs) generated in the homoepitaxial hydride vapor phase epitaxy (HVPE) growth of m-plane gallium nitride (GaN). We investigated the effects of seed quality, especially dislocation density, on BSF generation during homoepitaxy. The results clearly identify basal-plane dislocation in the seed as a cause of BSF generation. We realized high-quality m-plane GaN substrates with a 2-in. diameter using HVPE on low-dislocation-density m-plane seeds. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

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