Tunnelling effects and electron transport in quantum dot structures

被引：2
|
作者：
Pichl, L
Horácek, J
Mitin, V
Ryzhii, V [1 ]
机构：
[1] Univ Aizu Tsuruga, Ikki, Aizu Wakamatsu 9658580, Japan
[2] Charles Univ, Inst Theoret Phys, CR-18000 Prague 8, Czech Republic
[3] Wayne State Univ, Detroit, MI 48202 USA
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 18卷 / 1-3期
关键词：
quantum dot; tunnelling rate; QD energy levels; wave packet dynamics; axial symmetry;
D O I：
10.1016/S1386-9477(02)00987-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Using an analytical model of electron confinement in quantum dots, we have calculated the tunnelling rates for electron quasi-bound states. Schrodinger equation for the disk-shaped system in consideration is readily solved both in the time-dependent and time-independent versions, and the quantitative importance of tunnelling phenomena in low temperature electron emission from quantum dots is revealed. Results of the quantum mechanical analysis are transferred into the device characteristics of common mufti-layer quantum dot hetero-structures. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：83 / 84
页数：2
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