Dry etching of bottom anti-reflective-coat and its application to gate length control

被引：2

作者：

Nishizawa, A ^{[1
]}

Tokashiki, K ^{[1
]}

Horiba, S ^{[1
]}

Miyamoto, H ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Sagamihara, Kanagawa 229, Japan

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING CONFERENCE PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/ISSM.1997.664598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dry etch characteristics of the organic bottom anti-reflective-coat (BARC) are studied and applied to control WSix polycide gate length precisely in quarter micron region. In the plasma of O2/Cl2 gas mixture, CD(critical dimension) control of less than 0.02 mu m, as well as an infinite selective etching of BARC to WSix film, was established by optimizing O2 ratio. This optimized BARC process can be applicable to 0.25 mu m level devices for increasing the pass chip yield.

引用

页码：F13 / F16

页数：4

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