Heat capacity of high-purity silicon

被引：0
|
作者：
Devyatykh, GG [1 ]
Gusev, AV [1 ]
Gibin, AM [1 ]
Timofeev, OV [1 ]
机构：
[1] Russian Acad Sci, Inst High Pur Subst, Nizhnii Novgorod 603600, Russia
来源：
INORGANIC MATERIALS | 1997年 / 33卷 / 12期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Heat capacity of high-purity single-crystal silicon was measured in the temperature range 2-270 K.
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收藏
页码：1206 / 1209
页数：4
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