Heat capacity of high-purity silicon

被引：0

作者：

Devyatykh, GG ^{[1
]}

Gusev, AV ^{[1
]}

Gibin, AM ^{[1
]}

Timofeev, OV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst High Pur Subst, Nizhnii Novgorod 603600, Russia

来源：

INORGANIC MATERIALS | 1997年 / 33卷 / 12期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heat capacity of high-purity single-crystal silicon was measured in the temperature range 2-270 K.

引用

页码：1206 / 1209

页数：4

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