Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells

被引：6

作者：

Reentila, O. ^{[1
]}

Mattila, M. ^{[1
]}

Knuuttila, L. ^{[1
]}

Hakkarainen, T. ^{[1
]}

Soparlen, M. ^{[1
]}

Lipsanen, H. ^{[1
]}

机构：

[1] Helsinki Univ Technol, Optoelect Lab, FIN-02015 Espoo, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷

关键词：

in situ monitoring; MOVPE; quantum wells; dilute nitrides; GaInNAs;

D O I：

10.1016/j.jcrysgro.2006.10.069

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Differences in sample quality and nitrogen incorporation in InGaAsN quantum well samples grown by metal-organic vapor phase epitaxy using either H-2 or N-2 as the carrier gas are studied by several ex situ methods. The nitrogen incorporation increases while the indium content and the growth rate of the quantum wells decrease when using N-2 as the carrier gas instead of H-2. Also, the hydrogen incorporation into the quantum well is reduced by one order of magnitude. In addition, the in situ reflectance monitoring technique is used to monitor the material quality of the sample and the slope of the reflectance change is shown to be linearly dependent on the quantum well nitrogen content. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：536 / 539

页数：4

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