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- [1] The role of N-2 and H-2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 37 - 40
- [3] Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N2 ambient Journal of Electronic Materials, 2000, 29 : 1398 - 1401
- [6] III-V-N alloys grown by MOVPE in H2 and N2 mixed carrier gases QUANTUM SENSING AND NANOPHOTONIC DEVICES IX, 2012, 8268
- [7] High quality InGaAsN growth by MOVPE using N2 carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 337 - 340
- [8] Effect of carrier gas on the properties of MOVPE-grown GaN and GaN/AlGaN MQWs:: a comparison of H2 to N2 as a carrier gas PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 141 - 143
- [10] Growth of semi-insulating InP(Fe) by vapor-phase epitaxy using N2 H2 as a carrier gas Chinese Journal of Lasers B (English Edition), 1996, B5 (01): : 72 - 76