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- [31] A comparison of Al2O3/HfO2 and Al2O3/ZrO2 bilayers deposited by the atomic layer deposition method for potential gate dielectric applications JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (2A): : 919 - 925
- [34] Effect of processing conditions on the electrical characteristics of atomic layer deposited Al2O3 and HfO2 films DIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2010, 28 (02): : 213 - 221