Atomic layer deposited ultrathin HfO2 and Al2O3 films as diffusion barriers in copper interconnects

被引：29
|
作者：
Majumder, Prodyut [1 ]
Katamreddy, Rajesh
Takoudis, Christos
机构：
[1] Univ Illinois, Dept Chem Engn, Chicago, IL 60607 USA
[2] Univ Illinois, Dept Bioengn, Chicago, IL 60607 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 10期
关键词：
D O I：
10.1149/1.2756633
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Atomic layer deposited ultrathin HfO2 and Al2O3 films were studied as diffusion barriers between Cu and Si substrate. The thermal stability of 3 nm thick HfO2 and Al2O3 films was investigated after annealing at different temperatures for 5 min in N-2. X-ray diffraction analyses and sheet resistance measurements suggest that both barrier films were thermally stable and the formation of Cu3Si started to take place only after annealing at high temperatures. Specifically, our results show that 3 nm thick HfO2 and Al2O3 diffusion barriers break down after annealing in N-2 at 700 and 750 degrees C, respectively. (C) 2007 The Electrochemical Society.
引用
收藏
页码：H291 / H295
页数：5
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