Defect Assessment and Leakage Control in Atomic Layer Deposited Al2O3 and HfO2 Dielectrics

被引：0
|
作者：
Gonzalez, M. B. [1 ]
Rafi, J. M. [1 ]
Beldarrain, O. [1 ]
Zabala, M. [1 ]
Campabadal, F. [1 ]
机构：
[1] CSIC, Inst Microelect Barcelona, IMB CNM, Campus UAB, Bellaterra 08193, Spain
来源：
PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) | 2013年
关键词：
Al2O3; HfO2; ALD; Charge trapping; Defect generation; CAPACITORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, a systematic study of the electrical characteristics of Al2O3 and HfO2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of preexisting electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.
引用
收藏
页码：277 / 279
页数：3
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