Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3

An organic thin-film transistor memory, based on the pentacene semiconductor/nanoparticle-Al floating-gate/Al2O3 tunneling layer, is demonstrated by a simple fabrication process. The floating-gate transistor exhibits significant hysteresis behaviors in current-voltage characteristics and these hysteresis loops size depends on the gate voltage sweeping range. The memory windows of 32.5, 50, and 67.5 V and the memory ratio of 13, 32, and 70 can be obtained by the writing/erasing pulse of +/- 40 V, +/- 50 V, and +/- 60 V, respectively. The charge storage mechanism is discussed well via holes inject or eject the floated gate by F-N tunneling. (C) 2010 American Institute of Physics. [doi:10.1063/1.3432667]