Structure and Optical Properties of Thin Al2O3 Films Deposited by the Reactive Ion-Plasma Sputtering Method on GaAs (100) Substrates

被引：6
|
作者：
Seredin, P. V. [1 ]
Goloschapov, D. L. [1 ]
Lukin, A. N. [1 ]
Len'shin, A. S. [1 ]
Bondarev, A. D. [2 ]
Arsent'ev, I. N. [2 ]
Vavilova, L. S. [2 ]
Tarasov, I. S. [2 ]
机构：
[1] Voronezh State Univ, Voronezh 394006, Russia
[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2014年 / 48卷 / 11期
关键词：
INFRARED REFLECTION SPECTRA; SPINODAL DECOMPOSITION; HETEROSTRUCTURES;
D O I：
10.1134/S1063782614110256
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Structural analysis and optical spectroscopy are used to study the properties of ultrathin Al2O3 films deposited in an ion-plasma sputtering installation. It is possible to demonstrate that the technological method used to deposit the films can yield amorphous, smooth, pore-free, and almost homogeneous films in which crystals of the a phase of aluminum oxide Al2O3 nucleate. The films transmit light extremely well in the IR (infrared), visible, and UV spectral ranges and are of potential importance for the development on their basis of antireflection coatings for mirrors of high-power semiconductor lasers based on III-V compounds.
引用
收藏
页码：1527 / 1531
页数：5
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