Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature

被引：16
|
作者：
Cheong, HM
Lee, SH
Nelson, BP
Mascarenhas, A
Deb, SK
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Sogang Univ, Dept Phys, Seoul 121742, South Korea
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 17期
关键词：
D O I：
10.1063/1.1320015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present evidence for long-range hydrogen motion in hydrogenated amorphous silicon (a-Si:H) under room-temperature illumination, by monitoring the changes in the Raman spectrum of an a-WO3 overlayer with illumination. We observe that illumination causes hydrogen to diffuse out of the a-Si:H layer into the a-WO3 layer. This hydrogen motion is observed to saturate after about 30 min when the a-Si:H is illuminated with 15 W/cm(2) of the 514.5 nm laser line at room temperature. The amount of hydrogen that diffuses out of the a-Si:H layer is estimated semiquantitatively to be approximately 9x10(-4) at. %. (C) 2000 American Institute of Physics. [S0003-6951(00)02243-9].
引用
收藏
页码：2686 / 2688
页数：3
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