LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：44

作者：

GRAEFF, CFO

BUHLEIER, R

STUTZMANN, M

机构：

[1] Max-Planck-Institut fur Festkoerperforschung, 7000 Stuttgart 80

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 23期

关键词：

D O I：

10.1063/1.109170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of light-induced creation and annealing of metastable dangling bond defects in undoped hydrogenated amorphous silicon thin films are reported. A decrease of the defect density by 50% induced by continuous illumination is observed after fast defect creation by pulsed light. The kinetics of creation and recovery are discussed, as well as the implications for present models treating metastable defects in hydrogenated amorphous silicon.

引用

页码：3001 / 3003

页数：3

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