Effect of double-stranded DNA on electrical double layer structure at oxide/electrolyte interface in classical molecular dynamics simulation

被引:12
|
作者
Maekawa, Yuki [1 ]
Shibuta, Yasushi [1 ]
Sakata, Toshiya [1 ]
机构
[1] Univ Tokyo, Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
基金
日本科学技术振兴机构;
关键词
FIELD-EFFECT TRANSISTOR; SINGLE NUCLEOTIDE POLYMORPHISM; INITIO FORCE-FIELD; SEMICONDUCTOR-DEVICE; SURFACE; TEMPERATURE; LIMITATIONS; MECHANISM; CHARGES;
D O I
10.1016/j.cplett.2014.11.068
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The elucidation of the electrical double layer (EDL) structure including biomolecules is helpful in controlling biointerfacial functions in biosensing devices. In this study, the effect of double-stranded DNA (ds-DNA) on the EDL structure at the SiO2/NaClaq interface in a concentrated solution was investigated by classical molecular dynamics (MD) simulation. In 1.0 M NaClaq, negatively charged ds-DNA shielded electrically by cations did not affect the potential profile of the EDL structure. This finding indicates that the simulated bio-interfacial structure allows the detection of ionic charges adsorbed directly onto substrates in a concentrated solution regardless of the presence of shielded biomolecular charges. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:152 / 157
页数:6
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