Photo-curable epoxy functionalized cyclotetrasiloxane as a gate dielectric for organic thin film transistors

被引：5
|
作者：
Jung, Choong-Hwa [2 ]
Cho, Hyunduck [1 ]
Lee, Sun-Young [2 ]
Hong, Yongtaek [1 ]
Lee, Changhee [1 ]
Hwang, Do-Hoon [2 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
[2] Kumoh Natl Inst Technol, Dept Appl Chem, Kumi 730701, South Korea
来源：
CURRENT APPLIED PHYSICS | 2010年 / 10卷 / 04期
关键词：
Cyclohexene-1,2-epoxide; Cyclotetrasiloxane; Photo-patternable insulator; Organic field-effect transistor; FIELD-EFFECT TRANSISTORS; TEMPERATURE;
D O I：
10.1016/j.cap.2010.01.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We synthesized a new photo-curable organic/inorganic hybrid material, cyclotetrasiloxane (CTS) derivative containing cyclohexene-1,2-epoxide functional groups (CTS-EPOXY), and its characteristics are compared with a prototypical organic gate insulator of poly(4-vinylphenol) (PVP) in the organic thin film transistors (OTFTs) using pentacene as an active p-type organic semiconductor. Compared with PVP, CTS-EPOXY shows better insulating characteristics and surface smoothness. A metal/insulator/metal (MIM) device with the 300-nm-thick CTS-EPOXY film shows more than two orders of magnitude lower current (less than 40 nA/cm(2) over the voltage range up to 60 V) compared with PVP. In addition, the pentacene TFT with CTS-EPOXY as a gate dielectric layer shows slightly higher field-effect mobility of mu(FET) = 0.20 cm(2)/V s compared to that with PVP. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1132 / 1136
页数：5
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