Photo-curable epoxy functionalized cyclotetrasiloxane as a gate dielectric for organic thin film transistors

被引：5

作者：

Jung, Choong-Hwa ^{[2
]}

Cho, Hyunduck ^{[1
]}

Lee, Sun-Young ^{[2
]}

Hong, Yongtaek ^{[1
]}

Lee, Changhee ^{[1
]}

Hwang, Do-Hoon ^{[2
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea

[2] Kumoh Natl Inst Technol, Dept Appl Chem, Kumi 730701, South Korea

来源：

CURRENT APPLIED PHYSICS | 2010年 / 10卷 / 04期

关键词：

Cyclohexene-1,2-epoxide; Cyclotetrasiloxane; Photo-patternable insulator; Organic field-effect transistor; FIELD-EFFECT TRANSISTORS; TEMPERATURE;

D O I：

10.1016/j.cap.2010.01.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We synthesized a new photo-curable organic/inorganic hybrid material, cyclotetrasiloxane (CTS) derivative containing cyclohexene-1,2-epoxide functional groups (CTS-EPOXY), and its characteristics are compared with a prototypical organic gate insulator of poly(4-vinylphenol) (PVP) in the organic thin film transistors (OTFTs) using pentacene as an active p-type organic semiconductor. Compared with PVP, CTS-EPOXY shows better insulating characteristics and surface smoothness. A metal/insulator/metal (MIM) device with the 300-nm-thick CTS-EPOXY film shows more than two orders of magnitude lower current (less than 40 nA/cm(2) over the voltage range up to 60 V) compared with PVP. In addition, the pentacene TFT with CTS-EPOXY as a gate dielectric layer shows slightly higher field-effect mobility of mu(FET) = 0.20 cm(2)/V s compared to that with PVP. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1132 / 1136

页数：5

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