Impact of on-chip interconnect frequency-dependent R(f)L(f) on digital and RF design

被引:12
|
作者
Cao, Y [1 ]
Huang, XJ
Sylvester, D
King, TJ
Hu, CM
机构
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Rambus Inc, Los Altos, CA 94022 USA
[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[4] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA
关键词
delay; frequency-dependence; inductance; noise; overshoot; quality factor; resistance; slew rate;
D O I
10.1109/TVLSI.2004.840399
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
On-chip global interconnect exhibits clear frequency dependence in both resistance (R) and inductance (L). In this paper, its impact on modern digital and radio frequency (RF) circuit design is examined. First, a physical and compact ladder circuit model is developed to capture this behavior, which only employs frequency independent R and L elements, and thus, supports transient analysis. Using this new model we demonstrate that the use of dc values for R and L is sufficient for timing analysis (i.e., 50% delay and slew rate) in digital designs. However, RL frequency dependence is critical for the analysis of signal integrity, shield line insertion, power supply stability, and RF inductor performance.
引用
收藏
页码:158 / 162
页数:5
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