On the frequency-dependent line capacitance and conductance of on-chip interconnects on lossy silicon substrate

被引：0

作者：

Ymeri, H ^{[1
]}

Nauwelaers, B

Maex, K

机构：

[1] Katholieke Univ Leuven, Dept Elect Engn, ESAT, Louvain, Belgium

[2] IMEC, Louvain, Belgium

来源：

MICROELECTRONICS INTERNATIONAL | 2002年 / 19卷 / 01期

关键词：

interconnection; multiconductor transmissions;

D O I：

10.1108/13565360210417736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a method for analysis and modelling of transmission interconnect lines with zero or nonzero thickness on Si-SiO2 substrate is presented. The analysis is based on semi-analytical expressions for the frequency-dependent transmission line admittances. The electromagnetic concept of free charge density is applied. It allows us to obtain integral equations between electric scalar potential and charge density distributions. These equations are solved by the Galerkin procedure of the method of moments. This new model represents narrow and thick line interconnect behaviour over a wide range of frequencies up to 20 GHz. The accuracy of the developed method in this work is validated by comparing with the rigorous simulation data obtained by full-wave electromagnetic solver and CAD-oriented equivalent-circuit modelling approach. The response of the proposed model is shown to be in good agreement with the frequency-dependent capacitance and conductance characteristics of general coupled multiconductor on-chip interconnects.

引用

页码：11 / 18

页数：8

共 50 条

[1] Accurate closed-form expressions for the frequency-dependent line parameters of on-chip interconnects on lossy silicon substrate
Hai, AW
Hai, L
2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 1753 - 1756
[2] Accurate closed-form expressions for the frequency-dependent line parameters of on-chip interconnects on lossy silicon substrate
Weisshaar, A
Lan, H
Luoh, A
IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2002, 25 (02): : 288 - 296
[3] Accurate closed-form expressions for the frequency-dependent line parameters of coupled on-chip interconnects on silicon substrate
Lan, H
Luoh, A
Weisshaar, A
ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING, 2001, : 335 - 338
[4] Boundary Element Computation of Line Parameters of On-chip Interconnects on Lossy Silicon Substrate
Li, Dongwei
Di Rienzo, Luca
APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL, 2011, 26 (09): : 716 - 722
[5] Accurate analytic expressions for frequency-dependent inductance and resistance of single on-chip interconnects on conductive silicon substrate
Ymeri, H
Nauwelaers, B
Maex, K
De Roest, D
Vandenberghe, S
PHYSICS LETTERS A, 2002, 293 (3-4) : 195 - 198
[6] Some measurement results for frequency-dependent inductance of IC interconnects on a lossy silicon substrate
De Roest, D
Ymeri, H
Vandenberghe, S
Stucchi, M
Schreurs, D
Maex, K
Nauwelaers, B
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (02) : 103 - 104
[7] Wideband lumped element model for on-chip interconnects on lossy silicon substrate
Sun, Sheng
Kumar, Rakesh
Rustagi, Subhash C.
Mouthaan, Koen
Wong, T. K. S.
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2006, : 529 - +
[8] Accurate closed-form expression for the frequency- dependent mutual impedance of on-chip interconnects on lossy silicon substrate
Ymeri, H
Nauwelaers, B
Maex, K
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 2001, 31 (03): : 137 - 140
[9] Wideband lumped element model for on-chip interconnects on lossy silicon substrate
Sun, Sheng
Kumar, Rakesh
Rustagi, Subhash C.
Mouthaan, Koen
Wong, T. K. S.
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2006, : 478 - 481
[10] Equivalent circuit modeling of single and coupled on-chip interconnects on lossy silicon substrate
Oregon State Univ, Corvallis, United States
IEEE Top Meet Ekectr Perform Electron Packag, (185-188):

← 1 2 3 4 5 →