Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

被引：1760
|
作者：
Schmidt, G
Ferrand, D
Molenkamp, LW
Filip, AT
van Wees, BJ
机构：
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
[2] Univ Groningen, Dept Appl Phys, NL-9747 AG Groningen, Netherlands
[3] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.62.R4790
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have calculated the spin-polarization effects of a current in a two-dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1% only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.
引用
收藏
页码：R4790 / R4793
页数：4
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