Electrical spin injection from ferromagnetic MnAs metal layers into GaAs -: art. no. 081304

被引：0

作者：

Ramsteiner, M ^{[1
]}

Hao, HY ^{[1
]}

Kawaharazuka, A ^{[1
]}

Zhu, HJ ^{[1
]}

Kästner, M ^{[1
]}

Hey, R ^{[1
]}

Däweritz, L ^{[1
]}

Grahn, HT ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 08期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.

引用

页数：4

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