An Active Gate Driver for Improving Switching Performance of SiC MOSFET

被引：0
|
作者：
Yang, Yuan [1 ]
Wang, Yan [1 ]
Wen, Yang [1 ]
机构：
[1] Xian Univ Technol, Dept Elect Engn, Xian, Shaanxi, Peoples R China
来源：
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2018年
基金：
中国国家自然科学基金;
关键词：
Silicon Carbide (SiC) devices; overvoltage; switching losses; An active gate driver (AGD);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An active gate driver (AGO) is presented in this work for Silicon Carbide (SiC) devices to fully utilize their potential of high-speed characteristic in higher power density and higher efficiency applications. It can actively adjust the drive voltage during the switching transient of SiC MOSFET and is with simple circuit implementation. Compared to the conventional gate driver (CGD) with fixed drive voltage, the proposed method has the capability of increasing the switching speed IN bile minimizing the switching stress. The operation principle of the proposed AGD and control concept are introduced in detaiL Finally, based on 1200V/19A SiC MOSFETs from CREE, experimental verification is carried out in double pulse test to illustrate the proposed AGD and the obtained results indeed verify its superiority than the CGD.
引用
收藏
页码：151 / 154
页数：4
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