A Study on Suppressing Surge Voltage of SiC MOSFET Using Digital Active Gate Driver

被引：3
|
作者：
Takayama, Hajime [1 ]
Okuda, Takafumi [1 ]
Hikihara, Takashi [1 ]
机构：
[1] Kyoto Univ, Dept Elect Engn, Nishikyo Ku, Kyoto 6158510, Japan
来源：
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA) | 2020年
关键词：
digital active gate drive; SiC MOSFET; wide-bandgap; fast switching; surge voltage; EMI; SWITCHING-BEHAVIOR;
D O I：
10.1109/WiPDAAsia49671.2020.9360264
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wide-bandgap power devices are expected to open the way to achieve an integrated power circuit with higher power density. However, the large surge voltage and ringing caused by the fast switching will lose the reliability of the device and increase electromagnetic interference (EMI) problems. In this paper, we propose a digital active gate driver for SiC power MOSFETs. Active gate drive is one of the solutions to achieve high-frequency switching without the above drawbacks. The digital active gate driver is designed based on the architecture of a digital-to-analog converter. The gate-source voltage waveform of the MOSFET is adjusted flexibly with a multi-bit gate signal sequence. It is experimentally verified that the proposed driver suppresses the surge voltage of SiC MOSFET during turn-off.
引用
收藏
页数：5
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