Effect of lattice deformation on semiconducting properties of CrSi2

被引：6

作者：

Krivosheeva, AV ^{[1
]}

Shaposhnikov, VL ^{[1
]}

Krivosheev, AE ^{[1
]}

Filonov, AB ^{[1
]}

Borisenko, VE ^{[1
]}

机构：

[1] Belarussian State Univ Informat & Radioelect, Minsk 220013, BELARUS

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 04期

关键词：

D O I：

10.1134/1.1568455

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of isotropic and anisotropic deformation on electronic and optical properties of semiconducting chromium disilicide CrSi2 is studied by the method of augmented plane waves. The compound is found to be an indirect-gap semiconductor with a band gap width of about 0.3 eV. It is found that the deformation affects the transitions similarly; however, for anisotropic deformation this effect is strongly nonlinear, and the stretching of the lattice up to 106% along the axis a results in the occurrence of a direct transition. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：384 / 389

页数：6

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