Plastic deformation of single crystals of CrSi2 with the C40 structure

被引:28
|
作者
Inui, H [1 ]
Moriwaki, M [1 ]
Ando, S [1 ]
Yamaguchi, M [1 ]
机构
[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 60601, Japan
关键词
CrSi2; transition-metal silicide; C40; structure; dislocation; synchroshear; high-resolution transmission electron microscopy;
D O I
10.1016/S0921-5093(97)00561-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The deformation behavior of single crystals of CrSi2 with the C40 structure has been investigated as a function of crystal orientation in the temperature range from room temperature to 1400 degrees C in compression. Plastic flow is observed only above 800 degrees C when slip along (<1(2)over bar 10>) on (0001) is operative and no other slip systems are observed in the whole temperature range investigated. The critical resolved shear stress (CRSS) for basal slip decreases rapidly with increasing temperature. Dislocations with b=1/3(<1(2)over bar 10>) gliding on (0001) basal planes are observed to dissociate into two identical partials with b=1/6(<1(2)over bar 10>) involving a stacking fault. High-resolution transmission electron microscopy of 1/3(<1(2)over bar 10>) dislocations indicates that basal slip in CrSi2 occurs through a synchroshear mechanism. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:63 / 68
页数:6
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