Formation and characterization of Si5C3 type silicon carbide by carbon ion implantation with a MEVVA ion source

A Si5C3 type silicon carbon has been prepared via carbon ion implantation into silicon substrate using a MEVVA ion source. Carbon ions were implanted into silicon substrate at a fluence of 5 x 10(17) ions/cm(2) and then the as-implanted samples were annealed at 1250 degrees C for 2 h. The thermal annealing produced a silicon carbide layer on the surface of silicon substrate. The results of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirm the existence of Si5C3, rather than SiC. The results of Fourier transform infrared reflection (FTIR) and Raman spectroscopy analyses show that the Si-C vibration frequency in crystalline Si5C3 is slightly less than that in crystalline ss-SiC. (c) 2007 Elsevier B.V. All rights reserved.