Formation and characterization of Si5C3 type silicon carbide by carbon ion implantation with a MEVVA ion source

被引：5
|
作者：
Guo, L. B.
Wang, Y. L.
Song, F.
He, F.
Huang, Y.
Yan, L. H.
Wan, Y. Z. [1 ]
机构：
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
[2] Nankai Univ, Photon Ctr, Tianjin 300071, Peoples R China
来源：
MATERIALS LETTERS | 2007年 / 61卷 / 19-20期
关键词：
Si5C3; semiconductors; ion implantation;
D O I：
10.1016/j.matlet.2007.01.031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A Si5C3 type silicon carbon has been prepared via carbon ion implantation into silicon substrate using a MEVVA ion source. Carbon ions were implanted into silicon substrate at a fluence of 5 x 10(17) ions/cm(2) and then the as-implanted samples were annealed at 1250 degrees C for 2 h. The thermal annealing produced a silicon carbide layer on the surface of silicon substrate. The results of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirm the existence of Si5C3, rather than SiC. The results of Fourier transform infrared reflection (FTIR) and Raman spectroscopy analyses show that the Si-C vibration frequency in crystalline Si5C3 is slightly less than that in crystalline ss-SiC. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：4083 / 4085
页数：3
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