Temperature-dependent random field in relaxor ferroelectrics

被引:0
|
作者
Ahn, SJ [1 ]
Kim, JJ
Kim, JH
Choo, WK
机构
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
关键词
relaxor ferroelectrics; Raman optical activity; random field; spin glass; dipolar relaxation;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Temperature dependence of random field is found to be intrinsic in a relaxor ferroelectric (RF) Pb(Yb1/2Nb1/2)O-3-PbTiO3 [PYN-PT] by Baman Optical Activity measurements. Its implications towards the formation of polar nanoregions (PNR) in the relaxor ferroelectrics are explored. Both inter-PNR. relaxation and intra-PNR. relaxation contributing to the very broad and complicated spectrum of relaxation are temperature-dependent and are analyzed by Vogel-Fulcher law and phonon-assisted tunneling model respectively.
引用
收藏
页码:350 / 353
页数:4
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