Temperature-dependent random field in relaxor ferroelectrics

被引：0

作者：

Ahn, SJ ^{[1
]}

Kim, JJ

Kim, JH

Choo, WK

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 46卷 / 01期

关键词：

relaxor ferroelectrics; Raman optical activity; random field; spin glass; dipolar relaxation;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Temperature dependence of random field is found to be intrinsic in a relaxor ferroelectric (RF) Pb(Yb1/2Nb1/2)O-3-PbTiO3 [PYN-PT] by Baman Optical Activity measurements. Its implications towards the formation of polar nanoregions (PNR) in the relaxor ferroelectrics are explored. Both inter-PNR. relaxation and intra-PNR. relaxation contributing to the very broad and complicated spectrum of relaxation are temperature-dependent and are analyzed by Vogel-Fulcher law and phonon-assisted tunneling model respectively.

引用

页码：350 / 353

页数：4

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