Focused-ion-beam etching in macroporous silicon to realize three-dimensional photonic crystals

被引：27
|
作者：
Wang, K
Chelnokov, A
Rowson, S
Garoche, P
Lourtioz, JM
机构：
[1] Univ Paris Sud, CNRS, Phys Solides Lab, F-91405 Orsay, France
[2] Inst Elect Fondamentale, CNRS, UMR 8822, F-91405 Orsay, France
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2000年 / 33卷 / 20期
关键词：
D O I：
10.1088/0022-3727/33/20/102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate that extremely high aspect ratio patterns can be created at a submicrometre scale using focused-ion-beam etching in a porous material. Thanks to a preliminary microscopic structuration of the etching material, the limiting effects usually observed in bulk material ion-beam etching are strongly reduced. Holes with an overall aspect ratio of 50 are obtained. In combination with the photo-electrochemical etching, this method is successfully used to fabricate three-dimensional silicon photonic crystals up to five periods thick at a submicrometre scale.
引用
收藏
页码：L119 / L123
页数：5
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