Uniform electron emission from a nitrogen-doped diamond-based electron emitter fabricated by the sintering technique

被引：0

作者：

Yamada, T ^{[1
]}

Sawabe, A

Koizumi, S

Itoh, J

Okano, K

机构：

[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Tokyo 1578572, Japan

[2] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan

[3] Electrotech Lab, Tsukuba, Ibaraki 3058588, Japan

[4] Int Christian Univ, Dept Phys, Tokyo 1818585, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 11期

关键词：

CVD; diamond; electron emission; nitrogen; vacuum microelectronics;

D O I：

10.1109/55.877201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nitrogen (N)-doped diamond-based electron emitter has been fabricated by the sintering technique prior to the chemical vapor deposition process in order to improve the uniformity. There are no spatial difference in reflective electron energy loss spectrum (REELS) from the diamond-based electron emitter, suggesting that the uniform surface conditions are obtained, The uniform electron emission from the obtained electron emitter is confirmed through the emission current vs anode voltage characteristics measurements. It seems that the uniformity of the emitter surface results in the uniform electron emission from the diamond electron emitter.

引用

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页码：531 / 533

页数：3

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