High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

被引:11
|
作者
Kim, Yoonsok
Kim, Taeyoung
Kim, Eun Kyu [1 ]
机构
[1] Hanyang Univ, Dept Phys, Seoul 04763, South Korea
基金
新加坡国家研究基金会;
关键词
molybdenum disulfide (MoS2); transition metal dichalcogenide; junction field-effect transistor; dielectric layer; interface trap; MULTILAYER MOS2 TRANSISTORS; HIGH-MOBILITY; HYSTERESIS; AL2O3;
D O I
10.1007/s12274-022-4263-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molybdenum disulfide (MoS2), one of transition metal dichalcogenides, is a promising semiconductor material for electronic or optoelectronic devices due to its favorably electronic properties. However, in metal-oxide semiconductor field-effect transistor (MOSFET) structures using MoS2, electrical performances such as mobility and subthreshold swing are suppressed by the interface trap density between the channel and dielectric layers. Moreover, the electrical stability of such structures is compromised due to interface traps and that can be analyzed such as current hysteresis and transient characteristics. Here, we demonstrate MoS2 heterojunction field-effect transistors (HFET) by applying MoS2/p(+)-Si heterojunctions and achieve high performance characteristics, including a mobility of 636.19 cm(2)/(V.s), a subthreshold swing of 67.4 mV/dec, minimal hysteresis of 0.05 V, and minimized transient characteristics. However, the HFET devices with varying the channel length demonstrated degradation of electrical performance with increasing the overlap area of the channel and dielectric layers. These results regarding MoS2/p(+)-Si HFETs resulted in the structural optimization of high-performance electronic devices for practical applications.
引用
收藏
页码:6500 / 6506
页数:7
相关论文
共 50 条
  • [21] Ge/Si nanowire heterostructures as high-performance field-effect transistors
    Xiang, Jie
    Lu, Wei
    Hu, Yongjie
    Wu, Yue
    Yan, Hao
    Lieber, Charles M.
    NATURE, 2006, 441 (7092) : 489 - 493
  • [22] Blocking transition of interface traps in MoS2/SiO2 field-effect transistors
    Jana, Santu Prasad
    Gupta, Suraina
    Gupta, Anjan K.
    PHYSICAL REVIEW B, 2023, 108 (19)
  • [23] Ge/Si nanowire heterostructures as high-performance field-effect transistors
    Jie Xiang
    Wei Lu
    Yongjie Hu
    Yue Wu
    Hao Yan
    Charles M. Lieber
    Nature, 2006, 441 : 489 - 493
  • [24] Emission of THz waves in MoS2 field-effect transistors
    Sun, Zongyao
    Zhang, Liping
    Li, Jiani
    Zhang, Meilin
    Su, Junyan
    PHYSICS OF PLASMAS, 2025, 32 (01)
  • [25] Silicene/MoS2 Heterojunction for High-Performance Photodetector
    Kharadi, Mubashir A.
    Malik, Gul Faroz A.
    Khanday, Farooq A.
    Shah, Khurshed A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (01) : 138 - 143
  • [26] Annealed Ag contacts to MoS2 field-effect transistors
    Abraham, Michael
    Mohney, Suzanne E.
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (11)
  • [27] MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts
    Du, Yuchen
    Yang, Lingming
    Zhang, Jingyun
    Liu, Han
    Majumdar, Kausik
    Kirsch, Paul D.
    Ye, Peide D.
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (05) : 599 - 601
  • [28] On Monolayer MoS2 Field-Effect Transistors at the Scaling Limit
    Liu, Leitao
    Lu, Yang
    Guo, Jing
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (12) : 4133 - 4139
  • [29] High-Performance Organic Field-Effect Transistors
    Braga, Daniele
    Horowitz, Gilles
    ADVANCED MATERIALS, 2009, 21 (14-15) : 1473 - 1486
  • [30] Breakdown of High-Performance Monolayer MoS2 Transistors
    Lembke, Dominik
    Kis, Andras
    ACS NANO, 2012, 6 (11) : 10070 - 10075