High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

被引:11
|
作者
Kim, Yoonsok
Kim, Taeyoung
Kim, Eun Kyu [1 ]
机构
[1] Hanyang Univ, Dept Phys, Seoul 04763, South Korea
基金
新加坡国家研究基金会;
关键词
molybdenum disulfide (MoS2); transition metal dichalcogenide; junction field-effect transistor; dielectric layer; interface trap; MULTILAYER MOS2 TRANSISTORS; HIGH-MOBILITY; HYSTERESIS; AL2O3;
D O I
10.1007/s12274-022-4263-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molybdenum disulfide (MoS2), one of transition metal dichalcogenides, is a promising semiconductor material for electronic or optoelectronic devices due to its favorably electronic properties. However, in metal-oxide semiconductor field-effect transistor (MOSFET) structures using MoS2, electrical performances such as mobility and subthreshold swing are suppressed by the interface trap density between the channel and dielectric layers. Moreover, the electrical stability of such structures is compromised due to interface traps and that can be analyzed such as current hysteresis and transient characteristics. Here, we demonstrate MoS2 heterojunction field-effect transistors (HFET) by applying MoS2/p(+)-Si heterojunctions and achieve high performance characteristics, including a mobility of 636.19 cm(2)/(V.s), a subthreshold swing of 67.4 mV/dec, minimal hysteresis of 0.05 V, and minimized transient characteristics. However, the HFET devices with varying the channel length demonstrated degradation of electrical performance with increasing the overlap area of the channel and dielectric layers. These results regarding MoS2/p(+)-Si HFETs resulted in the structural optimization of high-performance electronic devices for practical applications.
引用
收藏
页码:6500 / 6506
页数:7
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