Direct calculation of the MOSFET high frequency noise parameters

被引：0
|
作者：
Chen, CH [1 ]
Deen, MJ [1 ]
机构：
[1] Simon Fraser Univ, Burnaby, BC V5A 1S6, Canada
来源：
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE | 1997年
关键词：
D O I：
暂无
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
This paper presents for the first time a method to directly calculate the noise parameters (minimum noise figure NFmin, equivalent noise resistance R-n, and optimized source resistance R-opt and reactance X-opt) of MOSFETs based on HSPICE level 3 mode!, All physically-based high frequency noise sources - thermal noise from the channel, gate, source and drain resistances, induced gate noise and their correlations are considered, and the impact of gate resistance and induced gate noise on the noise parameters are studied. The method of direct calculation of noise parameters can be applied to any small signal device model.
引用
收藏
页码：488 / 491
页数：4
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