Analysis of scattering parameters and thermal noise of a MOSFET for its microwave frequency applications

被引：3
|
作者：
Goswami, A [1 ]
Gupta, M [1 ]
Gupta, RS [1 ]
机构：
[1] Univ Delhi, Dept Elect Sci, Semicond Device Engn Lab, New Delhi 110021, India
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2001年 / 31卷 / 02期
关键词：
MOSFET; scattering parameters; noise; gains;
D O I：
10.1002/mop.1369
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fringing field-effect-dependent MOSFET equivalent-circuit model for its microwave frequency applications has been developed. The thermal noise performance of the device has also been analyzed, including the distributed gate. The equivalent-current noise source takes into account the thermal noise generated by the resistive and inductive gate, and the results so obtained are compared with experimental / simulated data, and are in close agreement. (C) 2001 John Wiley & Sons, Inc.
引用
收藏
页码：97 / 105
页数：9
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