An analytical method to determine MOSFET's high frequency noise parameters from 50-Ω noise figure measurements

被引：0
|
作者：
Asgaran, Saman [1 ]
Deen, M. Jamal [1 ]
Chen, Chih-Hung [1 ]
机构：
[1] McMaster Univ, Dept Elect & Comp Engn, 1280 Main St W, Hamilton, ON L8S 4K1, Canada
来源：
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2006年
基金：
加拿大自然科学与工程研究理事会;
关键词：
analytical noise modeling; MOSFET noise; 50 Omega noise figure; noise parameters; channel noise; induced gate noise;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical method, along with closed-form solutions, for extracting MOSFET's RF noise parameters is presented. This method extracts the minimum noise figure, NFmin, equivalent noise resistance, R., and optimum source admittance Y-opt, of MOSFET directly from a single high frequency 50-Omega noise figure measurement. This method can accurately predict the noise parameters of deep-submicron MOSFETs.
引用
收藏
页码：341 / +
页数：2
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