Mico-photoluminescence of surface plasmon enhanced emissions from semi-polar InGaN/GaN quantum wells

被引：1
|
作者：
Ikeda, Kento [1 ]
Kawai, Kanata [1 ]
Matsuyama, Tetsuya [1 ]
Wada, Kenji [1 ]
Okada, Narihito [2 ]
Tadatomo, Kazuyuki [2 ]
Okamoto, Koichi [1 ]
机构：
[1] Osaka Prefecture Univ, Naka Ku, 1-1 Gakuen Cho, Sakai, Osaka 5998531, Japan
[2] Yamaguchi Univ, 2-16-1 Tokiwadai, Ube, Yamaguchi 7558611, Japan
来源：
27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021) | 2021年
关键词：
D O I：
10.1109/ISLC51662.2021.9615652
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have reported that enhancement of blue/green emission by SP resonance of InGaN/GaN quantum wells (QWs) on the polar-GaN substrate. In this study, we investigate SP enhanced light emissions also for InGaN/GaN QWs on semi-polar GaN substrate, where further enhancements can be expected.
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Excitation power dynamics of photoluminescence in InGaN/GaN quantum wells with enhanced carrier localization
    Kazlauskas, K
    Tamulaitis, G
    Mickevicius, J
    Kuokstis, E
    Zukauskas, A
    Cheng, YC
    Wang, HC
    Huang, CF
    Yang, CC
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)
  • [32] Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells
    Tateishi, Kazutaka
    Wang, Pangpang
    Ryuzaki, Sou
    Funato, Mitsuru
    Kawakami, Yoichi
    Okamoto, Koichi
    Tamada, Kaoru
    APPLIED PHYSICS EXPRESS, 2019, 12 (05)
  • [33] Surface-plasmon-enhanced light emitters based on InGaN quantum wells
    Okamoto, K
    Niki, I
    Shvartser, A
    Narukawa, Y
    Mukai, T
    Scherer, A
    NATURE MATERIALS, 2004, 3 (09) : 601 - 605
  • [34] Surface-plasmon-enhanced light emitters based on InGaN quantum wells
    Koichi Okamoto
    Isamu Niki
    Alexander Shvartser
    Yukio Narukawa
    Takashi Mukai
    Axel Scherer
    Nature Materials, 2004, 3 : 601 - 605
  • [35] Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm
    Bai, J.
    Gong, Y. P.
    Li, Z.
    Zhang, Y.
    Wang, T.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 175 : 47 - 51
  • [36] Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20(2)over-bar1} GaN Substrates
    Kyono, Takashi
    Yoshizumi, Yusuke
    Enya, Yohei
    Adachi, Masahiro
    Tokuyama, Shinji
    Ueno, Masaki
    Katayama, Koji
    Nakamura, Takao
    APPLIED PHYSICS EXPRESS, 2010, 3 (01)
  • [37] Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent
    Gong, Maogao
    Xing, Kun
    Zhang, Yun
    Liu, Bin
    Tao, Tao
    Xie, Zili
    Zhang, Rong
    Zheng, Youdou
    APPLIED PHYSICS EXPRESS, 2020, 13 (09)
  • [38] Influence of localized surface plasmons on carrier dynamics in InGaN/GaN quantum wells covered with Ag nanoparticles for enhanced photoluminescence
    Sun, Ling
    Zhang, Sishi
    Liu, Fei
    Han, Min
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 86 : 418 - 424
  • [39] Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions
    Liu, W
    Chua, SJ
    Zhang, XH
    Zhang, J
    APPLIED PHYSICS LETTERS, 2003, 83 (05) : 914 - 916
  • [40] Fabrication of surface metal nanoparticles and their induced surface plasmon coupling with subsurface InGaN/GaN quantum wells
    Huang, Che-Wei
    Tseng, Hung-Yu
    Chen, Chih-Yen
    Liao, Che-Hao
    Hsieh, Chieh
    Chen, Kuan-Yu
    Lin, Hung-Yu
    Chen, Horng-Shyang
    Jung, Yu-Lung
    Kiang, Yean-Woei
    Yang, C. C.
    NANOTECHNOLOGY, 2011, 22 (47)
12345