Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells

被引：0

作者：

Tateishi, Kazutaka ^{[1
]}

Wang, Pangpang ^{[1
]}

Ryuzaki, Sou ^{[1
]}

Funato, Mitsuru ^{[2
]}

Kawakami, Yoichi ^{[2
]}

Okamoto, Koichi ^{[3
]}

Tamada, Kaoru ^{[1
]}

机构：

[1] Kyushu Univ, Inst Mat Chem & Engn, Nishi Ku, 744 Motooka, Fukuoka, Fukuoka 8190395, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Katsura Campus, Kyoto 6158510, Japan

[3] Osaka Prefecture Univ, Dept Phys & Elect, Naka Ku, 1-1 Gakuen Cho, Sakai, Osaka 5998531, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期

关键词：

CARRIER DYNAMICS; EMITTING-DIODES;

D O I：

10.7567/1882-0786/ab0911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micro-photoluminescence (PL) mapping was investigated for Al-coated InGaN/GaN quantum wells (QWs), which showed huge PL enhancement by the surface plasmon (SP) resonance. The obtained images show inhomogeneity at the micro-meter scale; in addition, the region with lower PL intensities tend to have a longer PL wavelength for bare QWs. This correlation changed with an Al coating, positive correlations were observed in an area with a relatively short peak wavelength with blue-shift. Conversely, negative correlations were observed at longer peak wavelengths. These results suggest that the quantum-confined Stark effect (QCSE) was screened by the enhanced electrical-field of the SP resonance. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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