Micro-photoluminescence studies of InGaN/GaN quantum dots up to 150 K

被引：29
|
作者：
Sebald, K. [1 ]
Lohmeyer, H. [1 ]
Gutowski, J. [1 ]
Yamaguchi, T. [1 ]
Hommel, D. [1 ]
机构：
[1] Univ Bremen, Inst Solid State Phys, D-2800 Bremen 33, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 07期
关键词：
D O I：
10.1002/pssb.200565407
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present photoluminescence measurements on single InGaN quantum dots grown by metalorganic vapor phase epitaxy. The spatially and spectrally resolved luminescence properties of the single quantum dots were measured using low-temperature micro-photoluminescence spectroscopy. The observed sharp emission lines of the quantum dots were characterized by excitation density dependent measurements. They can easily be observed at temperatures up to 150 K. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1661 / 1664
页数：4
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