Micro-photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures

被引：0

作者：

Sebald, K ^{[1
]}

Lohmeyer, H ^{[1
]}

Gutowski, J ^{[1
]}

Einfeldt, S ^{[1
]}

Roder, C ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany

来源：

GAN, AIN, INN AND THEIR ALLOYS | 2005年 / 831卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present micro-photoluminescence measurements on unstructured InGaN/GaN quantum well samples. Single sharp emission lines were observed and their optical properties were studied as a function of temperature and excitation density. The experimental findings such as the independence of their spectral position on the excitation density and the observation of binding and antibinding multiexcitonic states give clear evidence for the existence of strong localization centers in the InGaN quantum well, which exhibit the same characteristics as they are known for quantum dot structures.

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页码：299 / 304

页数：6

共 25 条

[1] Micro-photoluminescence studies of InGaN/GaN quantum dots up to 150 K
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[2] Micro-photoluminescence Mapping of Localized Luminescent Centers in Blue and Green InGaN/GaN Multiple Quantum Wells
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[3] Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures
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[4] Power Dependent Micro-Photoluminescence of Green-InGaN/GaN Multiple Quantum Wells
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[10] Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells
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