Strain engineered semiconductor heterostructures for novel optoelectronic devices

被引：0

作者：

Shen, PH ^{[1
]}

Pamulapati, J ^{[1
]}

Wraback, M ^{[1
]}

Zhou, WM ^{[1
]}

Taysing-Lara, M ^{[1
]}

Dutta, M ^{[1
]}

机构：

[1] USA, Res Lab, Phys Sci Directorate, AMSRL,PS,PB, Ft Monmouth, NJ 07703 USA

来源：

TWENTIETH ARMY SCIENCE CONFERENCE - AWARD WINNING PAPERS | 1997年

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In this paper we show that in addition to improving the performance of existing components, strain may be used to achieve greater functionality in novel optoelectronic devices. We give as examples three such devices that we have conceived and demonstrated, in the two areas of strain, lattice mismatch induced and thermal expansion coefficient mismatch induced. The higher performance and functionality in these devices demonstrate that strain engineered heterostructures are a very promising area for device research and development.

引用

页码：111 / 115

页数：5

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