Strain engineered semiconductor heterostructures for novel optoelectronic devices

被引：0

作者：

Shen, PH ^{[1
]}

Pamulapati, J ^{[1
]}

Wraback, M ^{[1
]}

Zhou, WM ^{[1
]}

Taysing-Lara, M ^{[1
]}

Dutta, M ^{[1
]}

机构：

[1] USA, Res Lab, Phys Sci Directorate, AMSRL,PS,PB, Ft Monmouth, NJ 07703 USA

来源：

TWENTIETH ARMY SCIENCE CONFERENCE - AWARD WINNING PAPERS | 1997年

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In this paper we show that in addition to improving the performance of existing components, strain may be used to achieve greater functionality in novel optoelectronic devices. We give as examples three such devices that we have conceived and demonstrated, in the two areas of strain, lattice mismatch induced and thermal expansion coefficient mismatch induced. The higher performance and functionality in these devices demonstrate that strain engineered heterostructures are a very promising area for device research and development.

引用

页码：111 / 115

页数：5

共 50 条

[31] MOCVD OF COMPOUND SEMICONDUCTOR FOR OPTOELECTRONIC AND PHOTONIC DEVICES
ANDERSON, TJ
FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A1 - A4
[32] Nitride-organic hybrid heterostructures for possible novel optoelectronic devices: charge injection and transport
Kim, Hyunjin
Zhang, Qiang
Song, Yoon-Kyu
Nurmikko, Arto
Sun, Qian
Han, Jung
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 2, 2009, 6 (02): : 593 - +
[33] Novel Optoelectronic Devices: Transition-Metal-Dichalcogenide-Based 2D Heterostructures
Zeng, Qingsheng
Liu, Zheng
ADVANCED ELECTRONIC MATERIALS, 2018, 4 (02):
[34] Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications
Nolte, DD
JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6259 - 6289
[35] Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications
Department of Physics, Purdue University, West Lafayette, IN 47907-1396, United States
J Appl Phys, 9 (6259-6289):
[36] A Special Section on Effects of Strain in Semiconductor Heterostructures
Arciprete, Fabrizio
Calarco, Raffaella
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2017, 9 (07) : 1064 - 1065
[37] Strain mapping in semiconductor heterostructures using HREM
Plamann, T
Hytch, MJ
Kret, S
Laval, JY
Delamarre, C
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 23 - 26
[38] Gapless van der Waals Heterostructures for Infrared Optoelectronic Devices
Wen, Yao
He, Peng
Wang, Qisheng
Yao, Yuyu
Zhang, Yu
Hussain, Sabir
Wang, Zhenxing
Cheng, Ruiqing
Yin, Lei
Sendeku, Marshet Getaye
Wang, Feng
Jiang, Chao
He, Jun
ACS NANO, 2019, 13 (12) : 14519 - 14528
[39] MBE growth of high quality GaAs heterostructures for optoelectronic devices
Zhou, ZQ
Lin, YW
Niu, ZC
Li, CY
SEMICONDUCTOR LASERS II, 1996, 2886 : 313 - 318
[40] Integrated optoelectronic devices using compound semiconductor nanowires
Wang, DL
2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 943 - 944

← 1 2 3 4 5 →