A monolithic dual-band HgCdTe infrared detector

被引：0
|
作者：
Musca, CA [1 ]
Siliquini, JF [1 ]
Parish, G [1 ]
Dell, JM [1 ]
Faraone, L [1 ]
机构：
[1] Univ Western Australia, Dept Elect & Elect Engn, Nedlands, WA 6907, Australia
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
infrared; multispectral; photodetector; HgCdTe;
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The structure is the first reported on-pixel registered monolithic dual-band HgCdTe photoconductor. The technology is demonstrated by fabricating HgCdTe photoconductive detectors and the fabricated detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1284 / 1287
页数：4
相关论文
共 50 条
  • [21] Study of the pixel-pitch reduction for HgCdTe infrared dual-band detectors
    J. Baylet
    O. Gravrand
    E. Laffosse
    C. Vergnaud
    S. Ballerand
    B. Aventurier
    J. C. Deplanche
    P. Ballet
    P. Castelein
    J. P. Chamonal
    A. Million
    G. Destefanis
    Journal of Electronic Materials, 2004, 33 : 690 - 700
  • [22] Status of HgCdTe-MBE technology for producing dual-band infrared detectors
    Rajavel, RD
    Brewer, PD
    Jamba, DM
    Jensen, JE
    LeBeau, C
    Olson, GL
    Roth, JA
    Williamson, WS
    Bangs, JW
    Goetz, P
    Johnson, JL
    Patten, EA
    Wilson, JA
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 1100 - 1105
  • [23] Demonstration of a Dual-Band Mid-Wavelength HgCdTe Detector Operating at Room Temperature
    P. Martyniuk
    P. Madejczyk
    W. Gawron
    J. Rutkowski
    Journal of Electronic Materials, 2018, 47 : 5752 - 5758
  • [24] Demonstration of a Dual-Band Mid-Wavelength HgCdTe Detector Operating at Room Temperature
    Martyniuk, P.
    Madejczyk, P.
    Gawron, W.
    Rutkowski, J.
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (10) : 5752 - 5758
  • [25] Advanced HgCdTe technologies and dual-band developments
    Tribolet, Philippe
    INFRARED TECHNOLOGY AND APPLICATIONS XXXIV, PTS 1 AND 2, 2008, 6940
  • [26] Bi-color and dual-band HgCdTe infrared focal plane arrays at DEFIR
    Destefanis, G.
    Ballet, P.
    Baylet, J.
    Castelein, P.
    Gravrand, O.
    Rothman, J.
    Rothan, F.
    Perrais, G.
    Chamonal, J. P.
    Million, A.
    Tribolet, Philippe
    Terrier, B.
    Sanson, E.
    Costa, P.
    Vial, Laurent
    INFRARED TECHNOLOGY AND APPLICATIONS XXXII, PTS 1AND 2, 2006, 6206
  • [27] Dual-band infrared detectors
    Rogalski, A
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 19 (04) : 241 - 258
  • [28] Dual-band infrared detectors
    Rogalski, A
    PHOTODETECTORS: MATERIALS AND DEVICES V, 2000, 3948 : 17 - 30
  • [29] DUAL-BAND INFRARED DETECTORS
    A Rogalski Institute of Applied Physics Military University of Technology Kaliskiego St Warsaw Poland
    红外与毫米波学报, 2000, (04) : 241 - 258
  • [30] Study of Morphological Defects on Dual-Band HgCdTe on CdZnTe
    Reddy, M.
    Radford, W. A.
    Lofgreen, D. D.
    Olsson, K. R.
    Peterson, J. M.
    Johnson, S. M.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (08) : 2991 - 2997
12345