Recent Developments on SiGe BiCMOS Technologies for mm-wave and THz Applications

被引：6
|
作者：
Wietstruck, Matthias [1 ]
Marschmeyer, Steffen [1 ]
Schulze, Sebastian [1 ]
Wipf, Selin Tolunay [1 ]
Wipf, Christian [1 ]
Kaynak, Mehmet [1 ,2 ]
机构：
[1] IHP Leibniz Inst Innovat Mikroelekt, Frankfurt, Germany
[2] Sabanci Univ, Istanbul, Turkey
来源：
2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2019年
关键词：
BiCMOS technology; Heterojunction bipolar transistors; Wafer-level packaging; Through-silicon vias; wafer bonding;
D O I：
10.1109/mwsym.2019.8701049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the latest developments of high performance SiGe BiCMOS technologies with additional WLP technology modules are demonstrated. The combination of HBTs with fmax values beyond 700 GHz together with WLP technology modules such as interposer, Through-Silicon Vias (TSVs) and wafer bonding techniques are explained. Both silicon interposer substrates with embedded TSVs together with a novel Al-Al wafer bonding integration technique are realized to provide a high performance and low-cost FOWLP platform for 3D heterogeneous integration.
引用
收藏
页码：1126 / 1129
页数：4
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